An increasing number of power converter designs that use wide bandgap (WBG) materials such as SiC and GaN have become commercially available. A WBG semiconductor's fast switching capability must be well characterized to determine the power losses during switching and conduction, to optimize efficiency gains and to avoid negative effects such as shootthrough or excessive EMI. A Rohde & Schwarz oscilloscope with high resolution and low noise combined with a Rohde & Schwarz high-voltage differential probe with superior common mode rejection across frequency allows power converter designers to