High-power SiC and GaN switches using TO-247 packages exhibit high connection inductances, which inhibits high switching speeds. An internal Kelvin connection can solve that problem, but must be implemented carefully.
Structural irregularities in the body of an IGBT module can cause immediate or eventual electrical failure. These irregularities may be detected by three-dimensional acoustic micro imaging.
A research team developed a technique for observing concentration and dynamics of crystal-like dendrite growth in lithium-based batteries, and perhaps a way of suppressing it.