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1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses (.PDF Download)

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of critical importance. The relatively high conduction losses of MOSFET accentuate IGBT as a better choice for most of the applications requiring blocking voltages >1000 V and switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various

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