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Silicon Carbide Junction Transistors

Silicon Carbide Junction Transistors

A family of 1700V and 1200 V SiC Junction Transistors from GeneSiC Semiconductor reportedly increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, industrial motor control systems, and downhole applications.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, Junction Transistors can be easily paralleled because of their matching transient characteristics.

1700 V Junction Transistor Technical Highlights

·     Three offerings: 110 mΩ (GA16JT17-247), 250 mΩ (GA08JT17-247), and 500 mΩ (GA04JT17-247)

·     Tjmax = 175°C

·     Turn On/Off;  Rise/Fall Times <50 nanoseconds typical.

1200 V Junction Transistor Technical Highlights

·     Two offerings: 220 mΩ (GA06JT12-247) and 460 mΩ (GA03JT12-247)

·     Tjmax = 175°C

·     Turn On/Off; Rise/Fall Times <50 nanoseconds typical

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant TO-247 packages. The devices are immediately available from GeneSiC's Authorized Distributors.


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