EET

Synchronous MOSFET half bridge offers 90% efficiency

Texas Instruments Inc. introduces a synchronous MOSFET half bridge that achieves greater than 90% efficiency at 25 A – and in half the area of competitive power MOSFET devices. TI’s new CSD86350Q5D Power Block combines two asymmetric NexFET power MOSFETs in an advanced package that delivers high performance in low-voltage synchronous buck half-bridge applications, including servers, desktop and notebook PCs, base stations, switches, routers, and high-current point-of-load (POL) converters.

In addition to improving efficiency and power density, the NexFET Power Block can generate up to 40 A of current with a switching frequency of up to 1.5 MHz, which reduces solution size and cost. The optimized pinout and grounded lead frame significantly reduces development time and improves overall circuit performance. Furthermore, the NexFET Power Block can achieve comparable performance to other semiconductor technologies, such as GaN, but in a more cost effective manner.

Key features and benefits of CSD86350Q5D Power Block:

  • 5 x 6 mm SON outline is half the size of two discrete MOSFETs in 5 x 6 mm QFN packages
  • Greater than 90% power efficiency at 25 A operation -- 2% better efficiency and 20% lower power loss than competitive devices
  • Double the frequency without increasing power loss versus competitive solutions
  • The SON package with an exposed grounded pad on the bottom simplifies layout

For more information, contact Texas Instruments Inc., 12500 TI Blvd., Dallas, TX 75243. Phone: (972) 644-5580.

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish