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Super-speedy IGBTs reduce conduction losses, increase efficiency

Super-speedy IGBTs reduce conduction losses, increase efficiency

International Rectifier announces a new family of reliable and efficient 1,200-V Insulated Gate Bipolar Transistors (IGBTs) for induction heating, uninterruptible power supplies (UPS), solar, and welding applications.

The new group of super-fast 1,200-V IGBTs incorporates thin wafer Field-Stop Trench technology that greatly reduces switching and conduction losses to deliver higher power density and improved efficiency at higher frequencies. These devices are further optimized for applications that do not require short-circuit capability such as UPS, solar inverters, and welding, and complement the company's products with 10 microsecond short circuit capability for motor drive applications.

Covering a current range from 20 to 50 A as packaged devices and up to 150 A for die products, performance benefits include a wide square reverse bias safe operating area (RBSOA), positive VCE(on) temperature coefficient, and low VCE(on) to reduce power dissipation and achieve higher power density. Devices are available with or without an internal ultra-fast soft recovery diode. Die products are also available with solderable front metal (SFM) for improved thermal performance, reliability, and efficiency.

For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.

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