Cree Inc. announces a series of packaged diodes that deliver what is reportedly the industry’s highest blocking voltage available in SiC Schottky technology. These 1,700-V Z-Rec Schottky diodes virtually eliminate the reverse recovery losses suffered in silicon PiN diode alternatives, enabling ultra-efficient, smaller, and lighter systems — all with improved reliability.
The newly released packaged products extend the performance improvements and system cost savings enabled by Z-Rec technology at 1,700 V to lower-power applications designed with discrete components.
While the 1,700-V bare die have been available for customers who design their own custom power modules, the new TO-247-2 packages allow customers to take advantage of SiC for lower-power 1,700-V designs, enable more design flexibility in choosing current levels, and support a faster time to market.
Designated the C3Dxx170H Series, the new SiC Schottky diodes are rated for 10A/1,700V and 25A/1,700V and are available in an industry standard TO-247-2 package. Operating junction temperature is rated for -55° to 175° C.
For more information, contact Cree Inc., 4600 Silicon Dr., Durham, NC 27703. Phone: (800) 533-2583.