The Generation 8 (Gen8) 1,200-V IGBT platform utilizes trench gate field stop technology to offer best-in-class Vce(on) to reduce power dissipation and increase power density. The new technology offers softer turn-off characteristics well suited to motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters promote urrent sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175° C.
International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.