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Model helps engineers quantify benefits of silicon carbide MOSFETs in board-level circuit simulation

Model helps engineers quantify benefits of silicon carbide MOSFETs in board-level circuit simulation

Cree Inc. has expanded design-in support for its commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new model, circuit designers can easily evaluate the benefits that SiC Z-FET MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree’s behavior-based, temperature-dependent SPICE model is compatible with the LTspice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of Cree CMF10120D and CMF20120D Z-FETs in board-level circuit designs.

Cree SiC MOSFETs are capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight, and cost of power electronics systems.

For more information, contact Cree Inc., 4600 Silicon Dr., Durham, NC 27703. Phone: (800) 533-2583.


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