Renesas Electronics Corp. announces the development of a Schottky barrier diode (SBD), the RJS6005TDPP, employing silicon carbide (SiC), a material with great potential for use in power semiconductor devices. The new SiC Schottky barrier diode is suitable for use in high-output electronic systems such as air conditioners, communication base stations, and solar power arrays.
Demand has grown for more highly efficient power supply circuits in many types of systems to promote environmental preservation. There is a particularly strong need for more efficient power conversion in products using power switching circuits or inverter circuits enabling precise motor control, such as air conditioners, communication base stations, PC servers, and solar power arrays. Therefore, the diodes used in these power converter circuits need to provide faster switching speeds and low-voltage operation. Renesas developed the new SiC SBD to address these demands.
Key features of the new RJS6005TDPP SiC SBD:
- Faster switching speed offers 40% lower loss than existing products
- Low-voltage operation
The new RJS6005TDPP SiC-SBD uses a package equivalent to the industry-standard fully-molded TO-220, with which it is also pin compatible. This means that the RJS6005TDPP SiC SBD can easily be used as a replacement for conventional silicon diodes on existing printed wiring boards.
Renesas has a lineup of 3 to 30 A, voltage tolerance 600 V, power devices designed to meet the need for better energy efficiency in high-output systems such as air conditioners, communication base stations, and solar power arrays, and plans call for the introduction of a series with a voltage tolerance of 1,200 V.
For more information, contact Renesas Electronics America Inc., 2880 Scott Blvd., Santa Clara, CA 95050. Phone: (408) 588-6000.