High performance silicon rectifiers increase system efficiency

Newly released 600 V H-Series power factor correction (PFC) rectifiers from Qspeed Semiconductor have even lower reverse recovery charge, reportedly providing the highest switching efficiency of any silicon diode on the market. These PFC diodes help designers meet demanding performance specifications by increasing system efficiency, reducing EMI, and enabling the elimination or downsizing of other components. Because the diodes result in lower operating temperature, fewer components, and reduced board/heatsink requirements, they are suitable for increasing power density, reducing costs, and improving reliability.

The 600 V H-Series 3 to 12 A products have a lower reverse recovery charge temperature coefficient that minimizes switching losses at higher operating temperatures. They also have lower forward voltage for reduced conduction mode losses. Like all Qspeed diodes, the H-Series has a soft recovery waveform that results in lower EMI emissions. The devices are packaged in an internally isolated TO-220 with improved thermal resistance allowing this series to be extended to 12 A.

In addition, lower harmonic emissions improve system EMI ratings and allow for the use of fewer snubbers. The high diode switching efficiency not only improves power supply efficiency, but also reduces heat generation. In most cases, these benefits are achieved even after downsizing the PFC MOSFET and/or heatsink. Fewer components and lower operating temperatures enable higher power density designs and improve system reliability. By downsizing or eliminating components, designers lower their total bill of materials (BOM) costs. Like the earlier X-Series and Q-Series families, the H-Series products are based on the company’s proprietary silicon-based technology. For more information, contact Qspeed Semiconductor, 2916 Scott Blvd., Santa Clara, CA 95054. Phone: 408-654-1980.

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