EET
Gate drive IC suits hybrid and electric vehicles

Gate drive IC suits hybrid and electric vehicles

International Rectifier announces the AUIR0815S automotive-qualified IC featuring very high output current in excess of 10 A to drive large IGBTs or MOSFETs in inverter stages for the power train of hybrid and electrical vehicles.

The AUIR0815S’ super low output impedance and power losses allow operation in harsh and high temperature environments. Typical output resistance is 90 mOhm sink and 180 mOhm source. The device also features negative Vgs driving and continuous on-state capability as a result of an integrated PMOS output in parallel to the high-side pull-up NMOS. The OUTH and OUTL separated outputs allow selection of two different external resistors for charging and discharging the gate, essential for controlling EMI and CdV/dT effect in high power motor driver and SMPS applications.

At low input state on the IN pin, the OUTL is pulled down to VEE, allowing negative gate driving for margination and a wide range of IGBT selection. Internal shoot-through prevention logic controls the OUTH and OUTL outputs to avoid simultaneous conduction to optimize dead time delay. In addition, a low current consumption mode can be activated through an LPM input pin, which reduces the IC consumption at the expenses of slower operation delays.

The device is qualified according to AEC-Q100 standards and housed in an industry standard SO-8 package that features an environmentally friendly, lead-free, and RoHS-compliant bill of materials.

For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish