International Rectifier introduces a family of automotive qualified planar MOSFETs for a variety of applications used in Internal Combustion Engine (ICE), hybrid, and full electric vehicle platforms. The family of new devices utilizing the company's planar technology includes 55 V and 150 V standard gate drive N Channel MOSFETs, and -55 V and -100 V standard gate drive P channel MOSFETs suitable for high-side switch applications, requiring no additional charge pump for the gate drive. The 30, 55, and 100 V logic level gate drive N Channel MOSFETs simplify gate drive requirements and help reduce board space and component count. All of the devices are optimized for low on-state resistance (Rds(on)).
The new devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free, and RoHS compliant bill of materials. All of IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100% automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects. AEC-Q101 qualification requires that there is no more than a 20% change in Rds(on) after 1,000 temperature cycles of testing. However, in extended testing, IR’s new AU Bill of Materials exhibited a maximum Rds(on) shift of only 12% at 5,000 temperature cycles.
For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.