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Automotive MOSFETs reduce lead resistance by 50%

Automotive MOSFETs reduce lead resistance by 50%

International Rectifier announces the introduction of a family of automotive-qualified MOSFETs housed in a WideLead TO-262 package that reduces lead resistance by 50% compared to traditional TO-262 packages, while offering 30% higher current.

The new MOSFETs are designed for generic heavy load and high power through-hole applications requiring low on-state resistance (Rds(on)), electric power steering and battery switches used in internal combustion engine cars, as well as micro and full hybrid vehicles. These automotive MOSFETs combine the company's advanced silicon and packaging technologies to offer significant performance improvements while being compatible with existing design standards, according to company sources.

In standard TO-262 through-hole packages, source and drain leads can add up to 1 mOhm of resistance, in addition to the on-state resistance of the MOSFET. The new WideLead TO-262 through-hole package reduces lead resistance to less than half a milliohm, greatly reducing conduction losses and heating in the leads to deliver 30% more current-carrying capability than a traditional TO-262 package for a given operating temperature. Under evaluation, the lead temperature of the WideLead was 30% cooler than the standard TO-262 at dc currents of 40 A and 39% cooler at 60 A. Further, other packaging enhancements allow the WideLead to deliver 20% lower Rds(on) compared with the same MOSFET in a standard TO-262 package.

IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100% automated wafer level visual inspection. The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free, and RoHS compliant bill of materials.

For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.

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