Employing all SiC construction, the CAS100H12AM1 from Cree is a 1200 V, 100 A power module configured in a 50 mm half-bridge circuit with five 1200 V, 80 mΩ Z-FET MOSFETs and five 1200V Z-Rec Schottky diodes (Fig. 1). Maximum junction temperature for the MOSFETs are 150°C and the diodes are 175°C. Modules are rated to 125°C maximum case temperature. And, MOSFET gate drivers are available.
The SiC components enable the module to operate at exceptionally high switching frequencies that can reduce the size, weight and cost of the power conversion system. The module has demonstrated up to 100 kHz switching frequency, which allows higher efficiency and can reduce total system costs compared with silicon-based technologies. Fig. 2 shows the module’s internal construction and Fig. 3 shows the module package. The table lists the module’s major characteristics.
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, exercise special precautions to obtain the best performance. The interconnection between the gate driver and module housing must be as short as possible, which will provide the best switching time and avoid the potential for device oscillation. Also, to avoid excessive VDS overshoots, use care to insure minimum inductance between the module and link capacitors.
- Zero turn-off tail current from MOSFETs
- Zero reverse recovery current from the Schottky diodes
- High frequency operation
- Easy to drive MOSFET gate
- AlSiC baseplate and Si3N4 insulator
- High efficiency operation
- Reduced size, weight, and cost
- Reduced thermal requirements
- Long term stability and reliability
High Power Applications:
- Solar, UPS and motor drive inverters
- Light wind and traction inverters
- High power auxiliary converters
- Inverter replacement for silicon IGBT power modules
- High SiC power density