The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., and uses high-performance EZ-GaN technology that combines low switching and conduction losses. This reduces the energy loss by to 50% compared to conventional silicon-based power conversion designs, Transphorm says. The TO-220-packaged device features RDS(on) of 150 mΩ,Qrr of 42 nC and a high frequency switching capability.
Typical applications include motor drives, power supplies and inverters for solar panels and electric vehicles.
More info: www.transphormusa.com.