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Image courtesy of IXYS
<p>(Image courtesy of IXYS).</p>

High-Speed Gate Driver for Isolated Drive Applications up to 4KV

IXYS Corporation announced a high-speed gate driver chipset that includes a logic interface (the IX6610) and a MOSFET/IGBT gate driver (the IX6611). The chipset is designed for pulse transformer isolated power conversion applications.

The IX6610 is a primary side logic device that implements a dual-channel bidirectional transformer interface to drive a secondary side gate driver. It is a TTL level microcontroller (MCU) interface that can transmit, through the isolation barrier, the primary side input commands, secondary side output faults, and power supply faults. With a built-in interlock and dead time control, the IX6610 can be utilized with an MCU to condition input signals and monitor system errors.

Capable of sourcing and sinking a peak current of 10A, the IX6611 is a secondary side, intelligent, high-speed gate driver designed to drive both MOSFETs and IGBTs. It contains the necessary circuit blocks for pulse transformer isolated applications. High frequency, narrow pulses (as short as 500ns) are used for transmitting bidirectional signals across the isolation barrier to avoid duty cycle restrictions and prevent transformer saturation. Other features include supply under and over voltage lockout, thermal shutdown, overcurrent and over voltage protection.

The chipset provides +15V/-5V to the gates as well as +3.3V (at 50mA) to the microcontroller. It is optimized to drive medium-power half-bridge configurations and can support MOSFETs/IGBTs rated up to 4000V. Well suited applications include such isolated power conversion applications as AC and DC motor drives, uninterruptible power supplies (UPS), inverters, high voltage DC/DC converters, etc.

The IX6610 is available in a 28-pin TSSOP with an exposed thermal pad (in tube or tape and reel) and the IX6611 in the 16-pin SOIC with an exposed thermal pad (in tube or tape and reel). 

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