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 Gallium Nitride Half Bridge Enables 48 V to 12 V System Efficiency

Gallium Nitride Half Bridge Enables 48 V to 12 V System Efficiency

EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1 V system loads.

Each device within the EPC2105 half-bridge component has a voltage rating of 80 V.  The upper FET has a typical RDS(ON) of 10 mW, and the lower FET has a typical RDS(ON of 2.3 mW. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2105 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density.

The EPC9041 Development Board s 2" x 1.5" and contains one EPC2105 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors.  The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.

The EPC2105 monolithic half-bridge price for 1K units is $7.17 each

The EPC9041 development boards are priced at $137.75 each 

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