Image courtesy of Efficient Power Conversion.
Efficient Power Conversion Corp. has introduced the EPC2037 as the newest member its enhancement-mode gallium nitride power transistor (eGaN FETs) family. The EPC2037 is a 100 VDS, 1 A device with a maximum RDS(ON) of 550 mW with 5 V applied to the gate. This GaN transistor delivers high performance due to its ultra-high switching frequency, low RDS(ON), exceptionally low QG and in a small package. This eGaN FET was designed to be driven directly from a digital logic IC thus eliminating the need for a separate and costly driver IC.
To simplify the evaluation process of this latest high performance eGaN FET, the EPC9051 development board is available to support easy "in circuit" performance evaluation of the EPC2037. The EPC9051 is a high efficiency, differential mode class-E amplifier development board that can operate up to 15 MHz without the addition of a separate driver IC.
In addition to wireless charging, circuit applications that benefit from this eGaN FET's performance include high frequency DC-DC conversion, LiDAR/pulsed power, and class-D audio amplifiers. This board may also be used for applications where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode Class-D amplifiers, common source bi-directional switch, and generic high voltage, narrow pulse width applications such as LiDAR.