Power Electronics

Single Die MOSFET and Schottky Barrier Diode for DC-DC Converters

6/3/2003 Single Die MOSFET and Schottky Barrier Diode for DC-DC Converters To meet the requirement for greater integration of devices and ever-smaller MOSFET packages for dc-dc converter applications, Toshiba America Electronic Components Inc. with its parent company, Toshiba Corp., has developed the industry's first integration of a power MOSFET and a Schottky barrier diode onto a single die to create a new device called a MOSBD™.

Toshiba's first MOSBD, designated TPC8A01, is a dual-channel device that combines two MOSFETS and a Schottky barrier diode, thus integrating the three devices required for synchronous rectification in dc-dc converters into a single package, allowing easy installation on a printed circuit board and providing greater board space savings. The device is suitable for dc-dc converters in notebook PCs, PDAs, LCDs, and motor drivers for hard disk drives.

Toshiba plans to expand the MOSBD line-up to include a single-channel version, integrating two devices (a MOSFET and a SBD). The single-channel version is under development.

The new MOSBDs greatly reduce wiring resistance and inductance due to the elimination of external wiring between the MOSFET and the diode. It is also manufactured using Toshiba's UMOS III process technology, enabling further performance improvement. The TPC8A01 MOSBD features a small footprint of 30 mm2 with a thickness of 1.6 mm, and is housed in industry-standard SOP-8 package.

For more information, visit chips.toshiba.com.

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