Cree Inc. has added two new silicon carbide (SiC)Zero Recovery™ Schottky diodes to its power device product family: a 300-V diode, in both 10-A and 20-A versions, and a 1200-V, also in 10-A and 20-A versions. These devices are offered in industry-standard TO-220 and TO-247 packages. Target applications for the 300-V devices are for output rectifiers and power factor correction in power supplies, and for the 1200-V devices as anti-parallel diodes for high-frequency inverters and snubber diodes for high-current IGBT inverters.
The new SiC Schottky diodes offer the same benefits as Cree’s other SiC rectifiers, including faster switching speeds and reductions in circuit size and complexity, yielding a higher power density for compact power supplies in high-performance applications.
For more information, visit www.cree.com.