Power Electronics

200-V Switching MOSFET

In a critical advance that will help designers meet the stringent power-density and packaging requirements of new sub-brick power architectures, Siliconix Inc. announced the industry's first 200-V power MOSFET available in the compact PowerPAK1212-8 package.

Intended for primary dc-to-dc switching applications for power supplies in fixed telecom networks and routers, the new n-channel Si7820DN TrenchFET power MOSFET is the smallest 200-V device on the market suited for power switching.

The PowerPAK 1212-8 package measures 3.3 mm × 3.3 mm with a low 1.07-mm height profile, offering smaller dimensions than SO-8 solutions while providing greatly superior thermal performance. Power dissipation for the PowerPAK 1212 8 package is 3.8 W, nearly double that of any MOSFET device with a TSSOP-8-size footprint or smaller. Typical thermal resistance is just 1.9°C/W compared to 16°C/W for the SO-8.

In addition to space savings and its high-voltage capability, the Si7820DN features on-resistance of 240 mΩ and a typical gate charge of 12.1 nC (at a 10-V gate drive). The new power MOSFET is rated for an operating junction and storage temperature range of –55°C to 150°C.

For more information, visit www.vishay.com.

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.