Opto Diode announces the third in the family of three super-high-power infrared (IR) emitters. Based on gallium aluminum arsenide (GaAlAs) technology, the new OD-250 features a wide angle, very uniform optical beam with ultra high optical output. Total power output is 250mW (typical) with a minimum output at 160 mW. Peak emission wavelength is 850nm, making this IR emitter ideal for imaging in military and security applications.
The new device has a spectral bandwidth of 40 nm at 50 percent with a half intensity beam angle at 110 degrees. The OD-250 is highly durable; metal surfaces are gold-plated and there are four wire bonds on die corners for redundancy. The standard, 3-lead TO-39 package can be stored and/or operated in extreme temperatures ranging from -40 °C to 100 °C, (maximum junction temperature at 100 °C). The new IR emitters feature rise times of 20 nsec and fall times of 20 nsec. They are designed for use in night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.