With the new SFH 4715AS and SFH 4716AS, Osram Opto Semiconductors has increased the output of its IR Oslon Black family for the second time in six months. This has been achieved by combining the latest chip design with an optimized package and Nanostack technology, in which each chip has two emission centers. Depending on the type of external optics and the particular application, the infrared light emitting diodes (IREDs) can provide illumination over a distance of more than 100 meters (109.36 yards), which makes them even better light sources for many camera-based applications.
Thanks to their high optical output of 1.37 W at 1 A, the new IR Oslon Black Stack components are the most powerful infrared light emitting diodes (IREDs) yet from Osram Opto Semiconductors. The reasons for the increase in output of over 70 percent compared with the standard version include the use of the latest generation of chips, an optimized package design and, most importantly, Nanostack technology, which means that each chip has two emission centers arranged one above the other.
The package dimensions of the Oslon Black Stack components remain unchanged at 3.85 mm x 3.85 mm x 2.29 mm or 1.51 mm. There is also still a choice between beam angles of 90 and 150 degrees, providing for drop-in replacement.