Power Electronics

Development Board for Enhancement Mode Gallium Nitride (eGaN) FET Circuits

Efficient Power Conversion Corporation (EPC) introduced the EPC9004 development board to make it easier for users to start designing with EPC's 200 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

The EPC9004 development board is a 200 V maximum input voltage, 2 A maximum output current, half bridge with on board gate drives, featuring the EPC2012 200 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2012 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

The EPC9004 development board is 2" x 1.5" and contains not only two EPC2012 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included with the EPC9004 development board for reference and ease of use.
EPC9004 development boards are priced at $95.00 each. EPC9004, like all EPC products, are available for immediate delivery from Digi-Key.

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