Two high performance R8 radiation hardened (RAD-Hard) power MOSFETs from International Rectifier are optimized for space grade point-of-load (POL) voltage regulator applications.
The new R8 logic level power MOSFETs utilize Trench technology to offer extremely low on-state resistance (RDS(on)) of 12 milliohms (typical) and total gate charge (QG) of 18nC (typical), increasing efficiency performance by up to 6% compared to existing solutions. The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17 A. The new devices are available in IR's new SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions. .
The products are fully characterized for radiation performance to 300 Krads of TID and SEE with LET of 81 MeV-cm2/mg with VGS rating of 12 V. Depending on the intended design orbit and anticipated radiation environment, R8 may be well suited for applications requiring a mission life of 15 years or more.
Pricing for the R8 MOSFETs begins at $594 each for 250-unit quantity. Production orders are available immediately.