Power Electronics

Power MOSFETs Feature Enhanced Power Dissipation

IXYS’ family of 500-V to 1200-V linear power MOSFETs incorporate a cell design that significantly improves ruggedness and power dissipation capabilities. Trench and other planar MOSFET technologies are not recommended for linear operation. However, these Linear MOSFETs are designed to meet requirements for those applications, such as linear power supplies, Class-A amplifiers and electronic loads.

Voltages supported include 500 V, 1000 V and 1200 V, while currents range from 17 A to 62 A. These power MOSFETs are offered in a number of different packages, including the standard TO-247 and a variety of “plus” sizes. The devices are also compatible with IXYS ISOPLUS packages, which provide integral backside case isolation.
The IXTK46N50L (500-V, 46-A, RDS(ON) = 0.18 Ω) and IXTN17N120L (1200-V, 17-A, RDS(ON) = 0.99 Ω) are examples of the family.

TAGS: Products
Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.