STMicroelectronics' SuperMESH3 power MOSFETs provide increased ruggedness, switching performance and efficiency for lighting ballasts, where they may be used in the PFC and half-bridge stages, as well as in switching power supplies. Based on a strip topology with an optimized vertical structure, the 525-V and 620-V rated MOSFETs provide low on-resistance together with reduced reverse-recovery time, gate charge, and intrinsic capacitance, as well as high dv/dt capability.
Device type: n-channel power MOSFETs
Voltage rating (VDS): 620 V (STx6N62K3 and STx3N62K3) and 525-V (STx7N52K3 and STx6N52K3)
On-resistance (RDSON): 0.98 Ω for the STx7N52K3 in DPAK, D2PAK, TO-220, and TO-220FP packages; 1.2 Ω for the STx6N52K3 in DPAK and TO-220FP packages; 1.28 Ω in DPAK package for STD6N62K3, and 2.5 Ω for the STx3N62K3 in IPAK, DPAK, D2PAK, TO-220 and TO-220FP packages
Gate Charge(QG): 13 nC typ for 2.7-A, 620-V devices; 25.7 nC typ. for 5.5-A, 620-V devices
Current Rating (ID): 2.7 A or 5.5 A at 620 V, 5 A or 6.3 A at 525 V
Features: 100% avalanche tested, zener protection, high dv/dt capability
Operating temperature range (max TJ): 150°C
Packaging: IPAK, DPAK, TO-220, and TO-220FP packages
RoHS compliant? yes
Target Applications: PFC and half-bridge sections of lighting ballasts and in switching power supplies for desktop PCs, battery chargers, and LCD TVs
Pricing: from $0.62 each in quantities of 1000
Availability: in volume production by Q4 2008
Datasheets posted on web? yes, for preliminary data sheets see www.st.com/stonline/stappl/productcatalog/app?path=/comp/stcom/PcStComOnLineQuery.showresult&querytype=type=product$$view=table&querycriteria=XJE010=*k3$$RNP139=1167.0 .Also, see www.st.com/stonline/products/families/transistors/power_mosfets/related_info/supermesh3.htm#rel_info for more information.