Diodes Incorporated has announced the introduction of its first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, the package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280ºC/W.
Occupying the exact same 1.44mm2 printed circuit board area and with the same low profile 0.5mm off-board height as the less thermally efficient SOT723 packaged MOSFETs, these leadless DFN1212-3 packaged alternatives are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portability consumer electronics products including digital cameras, tablet PCs and smartphones.
The MOSFET pair initially released by Diodes Incorporated are 20V rated and comprise the DMN2300UFD N-channel and the DMP21D0UFD P-channel parts. Helping to dramatically reduce conduction losses and power dissipation, the N-channel MOSFET presents a typical RDS(ON) of just 400mohm at VGS of 1.8V, which is approximately 50% lower than the most popular SOT723 packaged alternatives.
The DMN2300UFD N-channel MOSFET is priced at $0.1USD in 10k quantities and the DMP21D0UFD P-channel MOSFET at $0.11USD in 10k quantities. 30V and 60V rated parts will follow in the DFN1212-3 package, along with a comprehensive range of bipolar devices.