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Monolithic Gallium Nitride Power Transistor Half Bridge

Monolithic Gallium Nitride Power Transistor Half Bridge

EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system.

Each device within the EPC2100 half-bridge component has a voltage rating of 30 V.  The upper FET has a typical RDS(on) of 6 mW, and the lower FET has a typical RDS(on) of 1.5 mW. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2100 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6 mm x 2.3 mm for increased power density.

An EPC9036 development board is available. It has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation. The EPC9036 is 2" x 2" and contains one EPC2100 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors.

The EPC2100 monolithic half-bridge price for 1K units is $5.81 each and  the EPC9036 development boards are priced at $137.75 each.

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