Vishay Intertechnology, Inc. broadened its optoelectronics portfolio with the introduction of a new SMD low-profile 2.5 A IGBT and MOSFET driver for motor drives, alternative energy, welding equipment, and other high-working-voltage applications. The Vishay Semiconductors VOL3120 features a small footprint with a 2.5 mm height and minimum 8 mm clearance and external creepage distance. In addition to its compact size, the device provides high isolation voltage ratings of VIORM = 1050 V and VIOTM = 8000 V, ideal for applications operating at higher working voltages and/or with higher pollution degree environments.
The height of the VOL3120 is 30 % lower than drivers in the standard DIP package, saving space and enabling flat-sized applications such as inductive stovetops and compact inverters used in domestic solar and motor drives. In addition to providing superior isolation, the VOL3120 also incorporates state-of-the-art electrical performance. The device's undervoltage lock-out feature protects the IGBT / MOSFET from malfunction, while its common mode transient immunity of more than 48 kV/µs eliminates noise issues from low-voltage areas on the PCB.
The VOL3120's low current consumption of 2.5 mA maximum makes it a practical choice in power design applications where high-efficiency operation is required. The device boasts typical delays of less than 250 ns and rise and fall times of 100 ns typical, making it ideal for applications where fast switching of IGBTs or MOSFETs is required. The driver released today operates over a wide power supply range of 15 V to 32 V and an industrial temperature range from -40 °C to +100 °C. Featuring an unlimited floor life, the VOL3120 offers a Moisture Sensitivity Level (MSL) of 1 in accordance to J-STD-020. The device is RoHS-complaint, halogen-free, and Vishay Green.
Samples and production quantities of the VOL3120 are available now, with lead times of eight to 10 weeks for larger orders. Pricing for U.S. delivery starts at $0.79 per piece.