A high power phase-leg in the SimBus-F outline from IXYS Corporation handles 600 A and 650 V. The performance of the discrete 650 Volt XPT Trench IGBT products is now also available in module outlines, up to 600 Amperes with the IXYS fast "Sonic" diodes. The XPT IGBT and Sonic diode are designed for parallel operation in high power modules. Their saturation voltage positive temperature coefficient results in an optimal current sharing.
The silicon operation temperature range is increased to receive maximum possible current density. Maximum junction temperature of these devices is 175 °C where by constant operation the maximum temperature is specified at 150 °C.
Utilizing the IXYS SIMBUS F module outline, the MIXD600PF650TSF features a 17 millimeter height together with an isolated copper baseplate for optimal thermal conditions with market leading reliability.
The MIXD600PF650TSF is designed for high power control applications such as UPS, battery chargers, inverters, solar inverters, motor drives, electrical vehicles, elevators and other industrial applications.
The MIXD600PF650TSF is available in production quantities.