From Renesas Technology America, the RJK0383DPA dual power MOSFET enables smaller, higher-efficiency synchronous-rectification dc-dc converters in communication devices and laptop PCs. It enables higher output current than the company's previous dual MOSFETs (see table below), combining high-side and low-side power MOSFETs and a Schottky barrier diode in a 5.3-mm x 6.2-mm x 0.8-mm max package with high thermal conductivity.
Device type: dual power MOSFET
Voltage rating (VDSS): 30 V
On-resistance (RDSON): 12 mΩ typ for high side and 3.7 mΩ typ for low side, both at VGS = 4.5 V
Drain-Gate Load (QGD): 1.5 nC for high side and 6.5 nC for low side, both at VDD =10 V
Current Rating (ID max): 15 A on high side MOSFET and 45 A on low-side MOSFET with Schottky diode on chip
Features: In a synchronous-rectification circuit converting a 12-V input to a 1.1-V output at 600 kHz switching frequency, dual MOSFET achieves 91.6% efficiency.
Operating temperature range (TJ): °C to °C
Packaging: 5.3-mm ¡¿6.2-mm ¡¿0.8-mm max WPAK
RoHS compliant? yes.
Target Applications: dc-dc converters in laptop PCs, communication devices and other products
Pricing: $0.89 each in sample quantities
Availability: available Q4 2008
Datasheets posted on web? yes, see http://documentation.renesas.com/eng/products/transistor/rej03g1723_rjk0383dpads.pdf
Table. Comparison of RJK0383DPA with previous-generation devices
Product Name | Item | Max. Rating | On-Resistance, RDS(On) (m¥Ø) | QGD(a) | Package | |||||||||||||
VDSS | ID | VGS = 4.5V | VGS = 10V | |||||||||||||||
typ. | max. | typ. | max. | |||||||||||||||
RJK0383DPA | High-side MOS | 30 V | 15 A | 12.0 | 16.8 | 8.5 | 11.1 | 1.5 | WPAK | |||||||||
Low-side MOS | 30 V | 45 A | 3.7 | 5.2 | 2.5 | 3.3 | 6.5 | |||||||||||
RJK0384DPA (Previous | High-side MOS | 30 V | 15 A | 12.0 | 16.8 | 8.5 | 11.1 | 1.5 | ||||||||||
Low-side MOS | 30 V | 42 A | 4.3 | 6.0 | 2.9 | 3.8 | 5.2 | |||||||||||
RJK0389DPA | High-side MOS | 30 V | 15 A | 11.8 | 16.5 | 8.2 | 10.7 | 1.4 | ||||||||||
Low-side MOS | 30 V | 20 A | 10.5 | 14.7 | 6.8 | 8.9 | 2.2 |
(a) Drain-gate load (QGD)
(b) SBD: Schottky barrier diode