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APEC Technical Session 4.6: Paralleling High-Speed GaN Power HEMTs for Quadrupled Power Output (3/19/13)

We present a design example to multiply output power from high-voltage GaN HEMTs in converter applications. A design process starting with a robust unit-cell design, employing equal-length transmission-line gate drives and short drain terminations successfully doubled and quadrupled output power with little efficiency degradation. A 4-kW 220V:400V boost converter at 100-kHz was demonstrated using 4 GaN HEMTs achieving >99% efficiency from 15% to 90% load.

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