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Power Electronics
Vishay Siliconix SiHH26N60E Image courtesy of Vishay Intertechnology
<p><span data-scayt-lang="en_US" data-scayt-word="Vishay">Vishay</span> <span data-scayt-lang="en_US" data-scayt-word="Siliconix">Siliconix</span> <span data-scayt-lang="en_US" data-scayt-word="SiHH26N60E">SiHH26N60E (Image courtesy of Vishay Intertechnology).</span></p>

600 V Power MOSFETs Save Space, Increases Efficiency

Offered in the compact, fully RoHS-compliant PowerPAK 8x8 package, the Vishay Siliconix SiHH26N60E features a Kelvin source connection to increase efficiency by improving the gate drive signal. Built on Vishay Intertechnology's latest energy-efficient E Series superjunction technology, the device features low on-resistance down to 0.135 W at 10 V for extremely low conduction and switching losses. Features

  • Fully lead (Pb)-free device
  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)
  • Kelvin connection for reduced gate noise 

Looking for parts? Go to SourceESB.

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