Vishay Intertechnology, Inc. introduced a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices. Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63 ns and Qrr of 114 nC, with an improved gate charge of 34 nC. The SiHF8N50L-E3's improved reverse recovery characteristics result in better EMI immunity and better efficiency, while avoiding internal body diode recovery failures that cause MOSFET burn-out.
The new MOSFET combines its 500-V rating with a low 1.0-Ω maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in LLC, full-bridge, half-bridge, and double-forward topologies for LIPS inverters, HIDs, PC power supplies, and ballasts. For reliable operation, the device is 100 % avalanche tested. Peak current handling is 22 A pulsed and 8 A continuous (limited by maximum junction temperature). Offered in the TO-220 FULLPAK package, the SiHF8N50L-E3 is compliant to RoHS Directive 2002/95/EC.
Samples and production quantities of the new power MOSFET are available now, with lead times of eight to 10 weeks for larger orders. Pricing for U.S. delivery only is $0.475 per piece in 100,000-piece quantities.