Vishay Intertechnology, Inc. unveiled the first device built on its new p-channel TrenchFET(R) Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
The new Si7137DP in the PowerPAK(R) SO-8 package offers an ultra-low on-resistance of 1.9 milliohms at 10 V, 2.5 milliohms at 4.5 V, and 3.9 milliohms at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFETs translates into lower conduction losses, allowing the devices to perform switching tasks with less power loss than any previous p-channel power MOSFETs on the market.
The Si7137DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power or the battery power) are always on and drawing current. The lower on-resistance of the Si7137DP translates into lower power consumption, saving power and prolonging battery life between charges.
For applications such as these where a 20-V device is sufficient, the Si7137DP frees up designers from having to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. The closest 20-V p-channel device with a greater than or equal to 12-V gate-to-source rating available from a competitor features on-resistance of 14 milliohms at 4.5-V gate drive and is not characterized for a 10-V gate-to-source voltage. Among competing 30-V devices, the lowest available p-channel on-resistance with the area of the SO-8 footprint is 3.5 milliohms and 6.3 milliohms at gate drives of 10 V and 4.5 V respectively, still roughly double the Si7137DP.
Samples and production quantities of the new Si7137DP TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.70 per piece.