EPC has introduced the EPC2107 (100 V) and EPC2108 (60 V) eGaN half-bridge power integrated circuits (ICs) with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high side clamp.
Designed specifically for resonant wireless power transfer applications, these GaN power ICs come in extremely small, chip-scale packages, reducing the size of the overall system. This new line of chips is lower in cost due to reduced overall component count - one GaN device versus three FETs.
Although there are several standards for wireless power transfer, the device operates using the A4WP standard, Rezence. For example, Rezence allows for spatial freedom when charging, eliminating the need for exact positioning of devices when charging. It also has a long charging range, providing consumers with true 'drop and go' charging. Additionally, the standard allows for charging multiple devices with different power requirements simultaneously.
Another key feature is that Rezence-compliant wireless power systems will charge devices in the presence of metallic objects such as keys, coins, and utensils, making it suitable for automotive, retail, and household applications.
By integrating two eGaN® power FETs into an integrated power circuit, interconnect inductances and the interstitial space needed on the PCB are eliminated. Having this single integrated power component increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the wireless power system designer's end product.
These devices come in 1.35 mm x 1.35 mm chip-scale package for reduced size, improved switching speed, and thermal performance leading to increased power density. In support of the EPC2107 and EPC2108 integrated circuits, EPC also offers complete demonstration wireless power transfer systems, as well as development boards for the evaluation of these two new eGaN power integrated circuits.
The EPC9113 wireless power demonstration kit is A4WP Class-3 compliant, capable of delivering up to 16 W into a DC load while operating at 6.78 MHz (which can be modified to operate at 13.56 MHz), while the EPC9114 wireless power demonstration kit is A4WP Class 2 compliant at 10 W. The purpose of the demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer. Both kits utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate high efficiency wireless power systems.