Alliance Memory recently introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gbit density in the 96-ball lead-free FBGA package. Featuring silicon provided by Micron Technology, Inc., the AS4C512M16D3L offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
With minimal die shrinks, the device provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification.
The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.
The DDR3L SDRAM offers fully-synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.