Infineon Technologies has expanded its High Voltage portfolio with CoolMOSTM C7, introducing a new 650V Superjunction MOSFET technology. The new C7 product family provides Best-in-Class RDS(on) for all standard packages and - thanks to its low switching losses - efficiency improvements over the full load range. C7 is optimized for hard switching topologies such as Continuous Conduction Mode Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost. Typical applications are Solar, Server, Telecom and UPS (Uninterruptible Power Supply). The 650V breakdown voltage also makes C7 suitable for applications which require extra safety margin.
The C7 series offers the world's lowest RDS(on) of 19mΩ in a TO-247 package and 45mΩ in the TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers for the first time to operate at switching frequencies greater than 100 kHz whilst achieving Titanium levels of efficiency in Server PFC stages. This enables higher power density by reducing the space requirements for the passive components.
Furthermore, reduced energy in the output capacitance (Eoss) as well as the low gate charge (Qg) bring efficiency benefits also at light load conditions. Combining the Best-in-Class performance of C7 with Infineon's new Silicon Carbide (SiC) thinQ!™ Generation 5 Schottky Diode series and the ICE2 / ICE3 Control ICs offers designers unrivaled performance for CCM PFC circuits.
Samples of the 650V CoolMOS C7 products are available now. Volume production will start in June 2013.