Cree has announced that it can now take orders for 100-mm (4-in.) n-type silicon carbide (SiC) substrates and epitaxy material. The current Cree standard for SiC is 3-in. diameter material. The announcement was made at the recent International Conference on Silicon Carbide and Related Materials in Pittsburgh.
SiC is a high-performance semiconductor material used in the production of a broad range of power, light and communications components, including power switching devices, light emitting diodes (LEDs) and RF power transistors for wireless communications. Cree’s ability to produce single-crystal SiC in the larger 100-mm format allows customers to potentially double the number of devices produced per wafer compared with current production on 3-in. material.
“Cree’s launch of 100-mm substrates and epitaxy establishes that SiC can be a high volume, production-oriented material within the semiconductor industry. It demonstrates Cree’s technology and commitment to develop material products targeted to the needs of the commercial market,” notes Lyn Rockas, Cree Materials general manager.
“Cree would like to acknowledge the significant support received from the Army Research Laboratory and the Defense Advanced Research Projects Agency (DARPA) in our efforts to develop 100-mm SiC substrates and epitaxy. We all benefit from the commercialization of this product,” says John Palmour, Cree executive vice president of advanced devices.