From International Rectifier, the IRF6668 80-V and IRF6662 100-V DirectFET MOSFETs reduce system-level power loss as much as 10% in 200-W dc-dc bus converter applications. The low combined on-state resistance and gate charge make these devices suitable primary-side power switches for isolated dc-dc bus converters. When the IRF6662 or IRF6668 are used on the primary side of an unregulated 48-V input, 8-V output, 200-W isolated converter, the power density can be increased by taking advantage of the dual-sided cooling capability of the DirectFET MOSFET packaging technology with the addition of a heatsink. The new DirectFET MOSFETs can be used in either half-bridge dc bus topologies with the IR2085S or in full-bridge dc bus topologies with IR2086S, coupled with secondary-side low voltage DirectFET MOSFETs such as the IRF6635 for a complete, high-efficiency solution. Basic electrical specifications for the MOSFETs are listed in the table.
The 100V IRF6662 and the 80V IRF6668 DirectFET MOSFETs are $0.99 each in 10,000-unit quantities.
|Part Number||Package||VDSS||RDS(ON) max. @ VGS = 10 V||QG Typical||QGD Typical|
|IRF6668||DirectFET MZ||80 V||15 mΩ||22 nC||7.8 nC|
|IRF6662||DirectFET MZ||100 V||22 mΩ||22 nC||6.8 nC|