Power Electronics

Second Generation Enhancement Mode Gallium Nitride (eGaN®) 200 V FETs

Efficient Power Conversion Corporation announces the introduction of the EPC2012 as the newest member of EPC's second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly: being lead free, RoHS-compliant and halogen free.

The EPC2012 FET is a 1.6 mm2 200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1012 eGaN device. The EPC2012 has an increased pulsed current rating of 15 A (compared with 12 A for the EPC1012), is fully enhanced at a lower gate voltage, and has superior dv/dt immunity due to an improved ratio of QGD/QGS.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2012 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

In 1k piece quantities, the EPC2012 is priced at $2.10 and is immediately available through Digi-Key Corporation.

Efficient Power Conversion (EPC)
Part Number: EPC2012

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