Power Electronics

Development Board Features Enhancement Mode Gallium Nitride (eGaN®) FETs

Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9006 development board is a 100 V maximum device voltage, 5 A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2007 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9006 development board is 2" x 1.5" and contains not only two EPC2007 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, is included with the EPC9006 development board for reference and ease of use.

Efficient Power Conversion (EPC)
Part Number: EPC9006

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish