Fairchild Semiconductor has developed an optimized power MOSFET, the UniFET II MOSFET, which features an improved body diode, reduced switching losses and the capability of withstanding double the current stress during diode recovery dv/dt mode.
Fairchild's UniFET II MOSFETs deliver 50 percent better reverse recovery than alternate solutions. A slow reverse recovery can lead to the inability to handle the high reverse recovery current spike, more switching losses and the heating up of the power MOSFET. Fairchild's solution can handle more than double the current stress than existing solutions.
These UniFET II MOSFETs are based on Fairchild's advanced Planar technology, which offers a better Figure of Merit (FOM) (FOM: RDS(ON) * Qg). With lower input and output capacitances and best-in-class reverse recovery, these MOSFETs offer high efficiency.
And, by packing a high amount of power in a small package without excessive heat, this improves the overall efficiency of applications such as SMPS for LCD TVs and PDP TVs, SMPS for lighting systems, PC Power, and Server and Telecom power supplies.
Initial products offered in the UniFET II MOSFET series include the FDPF5N50NZ and the FDPF8N50NZ N-channel MOSFETS. The FDPF5N50NZ is a 500V, 4.5A, 1.5O device, featuring an RDS(ON) of 1.38O (Typ.) @VGS = 10V, ID = 2.25A; and a low gate charge (Typ. 9nC).
The FDPF8N50NZ is a 500V, 8A, 0.85O device that features an RDS(ON) of 0.77O (Typ.) @ VGS = 10V, ID = 4A, as well as a low gate charge of 14nC (Typ.).
These devices are one of the few in the industry to have robust ESD capability of 2kV HBM. This strong ESD capability is instrumental in protecting the application from adverse electrostatic events.