Diodes Incorporated has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying just 0.6mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256 C/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives.
The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm makes them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.
The 20V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150m?, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation. Its p-channel companion, the 20V rated
DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge ratings of these MOSFETs is also high, at respectively 2kV and 3kV.
The DMN2300UFB4 n-channel MOSFET is priced at $0.1 each in 10k quantities, the DMP21D0UFB4 p-channel MOSFET at $0.11 each in 10k quantities.