Toshiba America Electronic Components has expanded its power semiconductor lineup with a broad selection of low-RDS(ON) small-signal MOSFETs (S-MOS) suitable for high-speed switching devices or dc-dc converters in portable electronics equipment. The MOSFETs feature low gate capacitance.
Developed by Toshiba, the S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5-A to 2.5-A switching applications, and dc-dc converters operating at 0.5 MHz to 1 MHz. The family also includes 20 three-pin devices (SSM3K- and SSM3J-) that are suitable for 0.5-A to 4.0-A switching.
The six-pin devices, with on-resistance from 30 mΩ to 400 mΩ are available in a 1.6-mm x 1.6-mm x 0.55-mm package (ES6). The three-pin devices feature on-resistance from 100 mΩ to 400 mΩ and are offered in a 2.8-mm x 2.9-mm x 0.7-mm package (TSM). Both n- and p-channel polarities are available in either package, designated by K or J, respectively, in the part number.
The six-pin S-MOS family includes n-channel devices with drain-source voltages of 20 V or 30 V and driving voltage of 1.8 V, 2.5 V or 4 V, and p-channel devices with –12-V, -20-V or –30-V drain-source voltages, and driving voltages of 1.5 V, 1.8 V, 2.5 V or 4 V. The three-pin S-MOS family includes n-channel devices with drain-source voltages of 20 V, 30 V or 60 V, and driving voltages of 1.8 V, 2.5 V or 4 V. It also includes p-channel devices with –12-V, -20-V or –30-V drain-source voltages, and driving voltages of 1.8 V, 2.5 V or 4 V, respectively.
Samples of the small-signal MOSFETs are scheduled for availability in March 2007. These S-MOS devices range in price from $0.05 to $0.14 each in sample quantities.