Power Electronics

Second Generation 200 Volt Enhancement Mode Gallium Nitride (eGaN) Power Transistor

Efficient Power Conversion Corporation announces the introduction of the EPC2010 as the newest member of EPC's second-generation enhanced performance eGaN field effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances).

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1010 eGaN device. The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

In 1k piece quantities, the EPC2010 is priced at $5.06 and is immediately available through Digi-Key Corporation.

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