A family of 600 V insulated-gate bipolar transistors (IGBTs) from International Rectifier Corp. has been expanded with the introduction of the IRGP4640D, IRGP4650D and IRGP4660D. The new rugged, reliable devices are optimized for uninterruptible power supplies (UPS), solar, induction heating, industrial motor and welding applications.
The 40 A IRGP4640D, 50 A IRGP4650D and 60 A IRGP4660D IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode, the new devices are optimized for ultra-fast switching (8-30kHz) with 5us short circuit rating, and feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.
"The introduction of these new devices underlines IR's commitment to expanding its IGBT portfolio. The new IRGP4640D, IRGP4650D and IRGP4660D deliver a rugged, reliable 40 to 60 A solution for designers looking to optimize system performance," said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR's Energy Saving Products Business Unit.
The new IGBTs are suitable for a wide range of switching frequencies and deliver higher system efficiency and rugged transient performance. They are offered in an industry standard TO-247 package, with a maximum junction temperature of 175 °C and low EMI for improved reliability.
Pricing for the IRGP4640DPbF begins at US $2.15 each in 10,000-unit quantities. Production orders are available immediately.