A single active area photodiode from Opto Diode, the SXUV100, has a 100 mm2 active area. The highly sensitive device permits detection to 1 nm, and provides a remarkably stable response after exposure to EUV/UV conditions. Best applications include detection of 13.5 nm wavelengths or any high power density source monitoring between 1 nm - 150 nm.
The new photodiode is operational from 1 nm to 1000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Shunt resistance (Rsh) @ ± 10 mV is 10 MΩ (min.), the capacitance is typically 6 nF, and the response time is typically 250 nanoseconds.
The new SXUV100's operating and storage temperatures range from -10 ºC to 40 ºC (ambient) and from -20 ºC to 80 ºC (in nitrogen or vacuum conditions). The maximum junction temperature is 70 ºC and the lead-soldering temperature is 260 ºC at 0.080 in. from the case for 10 seconds.
Opto Diode's new 100 mm2 photodiodes are available in single or volume quantities, and shipping now.