Power Electronics
Photodiode Has 100 mm2 Active Area

Photodiode Has 100 mm2 Active Area

A single active area photodiode from Opto Diode, the  SXUV100, has a 100 mm2 active area.  The highly sensitive device permits detection to 1 nm, and provides a remarkably stable response after exposure to EUV/UV conditions.  Best applications include detection of 13.5 nm wavelengths or any high power density source monitoring between 1 nm - 150 nm.

The new photodiode is operational from 1 nm to 1000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm).  Shunt resistance (Rsh) @ ± 10 mV is 10 MΩ (min.), the capacitance is typically 6 nF, and the response time is typically 250 nanoseconds.

The new SXUV100's operating and storage temperatures range from -10 ºC to 40 ºC (ambient) and from -20 ºC to 80 ºC (in nitrogen or vacuum conditions). The maximum junction temperature is 70 ºC and the lead-soldering temperature is 260 ºC at 0.080 in. from the case for 10 seconds.

Opto Diode's new 100 mm2 photodiodes are available in single or volume quantities, and shipping now.

TAGS: Products
Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish